Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Rds On (Max) @ Id, Vgs 52 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 51nC @ 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max 163W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3