Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased,200mW
Specification
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Power - Max 200mW
Frequency - Transition 200MHz
Mounting Type Surface Mount
Package / Case SC-70, SOT-323