Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 96nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5878pF @ 10V
Power - Max 600mW
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)