Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A, 4.4A
Rds On (Max) @ Id, Vgs 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1325pF @ 10V
Power - Max 600mW
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)