MOSFET, P CH, -30V, -3.4A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operat
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 130 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 3.5nC @ 5V
Input Capacitance (Ciss) @ Vds 205pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 559.37
10
-
INR 450.18
100
-
INR 345.26
500
-
INR 305.61
1000
-
INR 240.95
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 559.37
Buying Option 2
1
-
INR 555.1
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 555.1