MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:35V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Max:150°C; MS
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 35V
Current - Continuous Drain (Id) @ 25°C 7A, 5A
Rds On (Max) @ Id, Vgs 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 7.7nC @ 5V
Input Capacitance (Ciss) @ Vds 570pF @ 15V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 829.6
10
-
INR 671
100
-
INR 511.79
500
-
INR 452.01
1000
-
INR 356.85
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 829.6
Buying Option 2
1
-
INR 549
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 549