MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:31W; Transistor Case Style:SOIC; No. of Pins:8; Operatin
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.7A
Rds On (Max) @ Id, Vgs 105 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 4.1nC @ 10V
Input Capacitance (Ciss) @ Vds 210pF @ 50V
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
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INR 805.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 805.2