MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11.6A (Ta)
Rds On (Max) @ Id, Vgs 10 mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) @ Vds 1235pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 228.75
10
-
INR 228.75
100
-
INR 193.37
1000
-
INR 193.37
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 228.75
Buying Option 2
1
-
INR 500.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 500.2