MOSFET, N CH, 150V, 4.1A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0563ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No. of Pins:8; Operating Te
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 67 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) @ Vds 760pF @ 75V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
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INR 933.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 933.3