MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature M
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.5A
Rds On (Max) @ Id, Vgs 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 32nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2130pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 969.9
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 969.9