MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 12 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) @ Vds 910pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 279.99
10
-
INR 279.99
100
-
INR 256.2
500
-
INR 236.68
1000
-
INR 219.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 279.99
Buying Option 2
1
-
INR 536.8
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 536.8