Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 11A
Rds On (Max) @ Id, Vgs 14 mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 60nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4044pF @ 10V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 732
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 732