MOSFET, NP CH, 30V/20V, 8SOIC; Transistor Polarity:N and P Complement; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:1W; Transistor Case Style:SOIC; No. of Pins:8; Operating
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V, 20V
Current - Continuous Drain (Id) @ 25°C 9.3A, 5.6A
Rds On (Max) @ Id, Vgs 18 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1958pF @ 10V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 671
10
-
INR 543.51
100
-
INR 417.24
500
-
INR 369.05
1000
-
INR 290.97
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 671
Buying Option 2
1
-
INR 634.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 634.4