Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 10.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) @ Vds 1686pF @ 20V
Power - Max 1.2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)