MOSFET, P CH, -40V, -10.8A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No. of Pins:8; Operat
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta)
Rds On (Max) @ Id, Vgs 13 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 49nC @ 10V
Input Capacitance (Ciss) @ Vds 2670pF @ 20V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)