Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Rds On (Max) @ Id, Vgs 120 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 632pF @ 50V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)