MOSFET, P, SMD, 3-SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; Operati
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Rds On (Max) @ Id, Vgs 200 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 330pF @ 10V
Power - Max 460mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 246.44
10
-
INR 204.96
100
-
INR 125.05
1000
-
INR 96.99
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 246.44
Buying Option 2
1
-
INR 82.35
3000
-
INR 82.35
6000
-
INR 76.86
9000
-
INR 73.2
15000
-
INR 69.54
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Order Multiple:1
Price : 82.35
Buying Option 3
1
-
INR 244
Please check the minimum quantity and order multiple
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Price : 244