MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1W
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A, 40A
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) @ Vds 1750pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-PQFN, Power56
Buying Option 1
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INR 1342
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Order Multiple:1
Price : 1342