Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 23A
Rds On (Max) @ Id, Vgs 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 1785pF @ 10V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad