MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2.2W; Transistor Case Style:Power 56; No. of Pins:
Specification
FET Type 2 N-Channel (Asymmetrical Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 23A
Rds On (Max) @ Id, Vgs 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 1695pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN