MOSFET,N CH,75V,9.2A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:96W; Transistor Case Style:Power 56; No. of Pins:8; Operating Te
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 91nC @ 10V
Input Capacitance (Ciss) @ Vds 4765pF @ 40V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-PQFN, Power56