MOSFET, N CH, 20V, 7A, MFET1.6X1.6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:2.1W; Transistor Case Style:µFET; No. of Pins:6; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Rds On (Max) @ Id, Vgs 26 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 13nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1025pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Buying Option 1
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INR 500.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 500.2