MOSFET, N CH, 30V, 19.5A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:31W; Transistor Case Style:MLP; No. of Pins:8; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17.5A (Ta), 19.5A (Tc)
Rds On (Max) @ Id, Vgs 5.3 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) @ Vds 2410pF @ 15V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
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INR 573.4
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Price : 573.4