MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:35W; Transistor Case Style:MLP; No. of Pins:8; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 880pF @ 50V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Buying Option 1
1
-
INR 640.5
10
-
INR 512.4
100
-
INR 393.45
500
-
INR 347.7
1000
-
INR 274.5
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 640.5
Buying Option 2
1
-
INR 634.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 634.4