MOSFET, DUAL, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:8; Operating Temperature Max:
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.7A
Rds On (Max) @ Id, Vgs 68 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 340pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
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INR 457.5
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Price : 457.5