MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:127W; Transistor Case Style:TO-252; No. of Pins:3; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs 10.2 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) @ Vds 2265pF @ 50V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Buying Option 1
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INR 1415.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1415.2