Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 9A, 6.5A
Rds On (Max) @ Id, Vgs 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 20V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD