MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:60mW; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperatur
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 55A
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 15V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Buying Option 1
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INR 500.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 500.2