Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V, 12V
Current - Continuous Drain (Id) @ 25°C 2.4A, 2.5A
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs 3.5nC @ 5V
Input Capacitance (Ciss) @ Vds 270pF @ 15V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6