MOSFET, N CH, 20V, 6.2A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:820mV; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Rds On (Max) @ Id, Vgs 24 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1125pF @ 10V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Buying Option 1
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INR 408.7
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Order Multiple:1
Price : 408.7