MOSFET, PP; Transistor Polarity:P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; Operating Temperature Max:
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 455pF @ 6V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Buying Option 1
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INR 512.4
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Price : 512.4