MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-263AB; No. of Pins:3; Operating Temperatu
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 138nC @ 10V
Input Capacitance (Ciss) @ Vds 6600pF @ 25V
Power - Max 310W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Buying Option 1
1
-
INR 2318
10
-
INR 1915.4
100
-
INR 1531.1
500
-
INR 1348.1
1000
-
INR 1116.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 2318
Buying Option 2
1
-
INR 2147.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 2147.2