MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:54W; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Rds On (Max) @ Id, Vgs 950 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) @ Vds 600pF @ 25V
Power - Max 54W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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INR 786.9
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Price : 786.9