Junction Field Effect Transistors,25V,625mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 60mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 600mV @ 10nA
Power - Max 625mW
Input Capacitance (Ciss) @ Vds -
Resistance - RDS(On) -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)