Transistors - Bipolar (BJT) -Single & Arrays,NPN,100mA,60V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 5V
Power - Max 625mW
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)