Transistors - Bipolar (BJT) -Single & Arrays,NPN, PNP,4A, 3A,50V, 40V
Specification
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 4A, 3A
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max 1.7W
Frequency - Transition 165MHz, 190MHz
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad