Transistors - Bipolar (BJT) -Single & Arrays,NPN - Avalanche Mode,500mA,100V
Specification
Transistor Type NPN - Avalanche Mode
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 10mA, 10V
Power - Max 680mW
Frequency - Transition 40MHz
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads