Transistors - Bipolar (BJT) -Single & Arrays,1 NPN, 1 PNP - Pre-Biased (Dual),100mA,50V, 30V
Specification
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V, 30V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 1.2V @ 330µA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V / 80 @ 5mA, 10V
Power - Max 125mW
Frequency - Transition 150MHz, 80MHz
Mounting Type Surface Mount
Package / Case SOT-665