Transistors - Bipolar (BJT) -Single & Arrays,NPN,1.2A,100V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 1.2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA, 1V
Power - Max 1W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads