Transistors - Bipolar (BJT) -Single & Arrays,NPN,100mA,250V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 250V
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
Power - Max 1W
Frequency - Transition 15MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body