Transistors - Bipolar (BJT) -Single & Arrays,NPN,3A,30V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 3A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
Power - Max 900mW
Frequency - Transition 100MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)