Transistors - Bipolar (BJT) -Single & Arrays,NPN,1.5A,500V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5A
Voltage - Collector Emitter Breakdown (Max) 500V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 500mA, 5V
Power - Max 2.8W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)