Transistors - Bipolar (BJT) -Single & Arrays,NPN,200mA,1200V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce Saturation (Max) @ Ib, Ic 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 200mA, 2V
Power - Max 1.6W
Frequency - Transition -
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA