Transistors - Bipolar (BJT) -Single & Arrays,NPN,1A,400V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 400V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 400mA
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 400mA, 5V
Power - Max 1W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads