Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,200mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 100mA, 1V
Power - Max 200mW
Frequency - Transition 300MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
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INR 256.2
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Order Multiple:1
Price : 256.2