Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,100mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 80mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Power - Max 100mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case SC-101, SOT-883