Transistors - Bipolar (BJT) -Single & Arrays,1 NPN Pre-Biased, 1 NPN,100mA, 200mA,50V
Specification
Transistor Type 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max) 100mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 210 @ 2mA, 10V
Power - Max 300mW
Frequency - Transition 230MHz
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363