Transistors - Bipolar (BJT) -Single & Arrays,NPN + Diode (Isolated),950mA,40V
Specification
Transistor Type NPN + Diode (Isolated)
Current - Collector (Ic) (Max) 950mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 5V
Power - Max 600mW
Frequency - Transition 150MHz
Mounting Type Surface Mount
Package / Case SC-74, SOT-457