Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,250mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Power - Max 250mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 110.41
10
-
INR 101.87
25
-
INR 92.72
100
-
INR 66.49
250
-
INR 39.04
500
-
INR 32.33
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 110.41
Buying Option 2
1
-
INR 103.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 103.7