Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased,150mW
Specification
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Power - Max 150mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case SC-75, SOT-416